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MOVPE生长GaN的准热力学模型及其相图
段树坤; 陆大成
1997
Source Publication半导体学报
Volume18Issue:5Pages:385
Abstract基于准热力学平衡模型对以TMGa和NH_3为源的MOVPE生长GaN的过程进行了分析,并在此基础上计算了MOVPE生长GaN的相图。Gan的MOVPE相图由GaN(s)单凝聚相区、GaN(s)+Ga(1)双凝聚相区、表面会形成Ga滴和不会形成Ga滴的两个腐蚀区构成。着重讨论了生长温度、反应室压力、载气组分、NH_3分解率和V/III比对GaN单凝聚相区边界的影响。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:358593
Date Available2010-11-23
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19449
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
段树坤,陆大成. MOVPE生长GaN的准热力学模型及其相图[J]. 半导体学报,1997,18(5):385.
APA 段树坤,&陆大成.(1997).MOVPE生长GaN的准热力学模型及其相图.半导体学报,18(5),385.
MLA 段树坤,et al."MOVPE生长GaN的准热力学模型及其相图".半导体学报 18.5(1997):385.
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