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匹配In(0.53)Ga(0.47)As/InP量子阱材料的GSMBE生长及特性分析
王晓亮; 孙殿照; 孔梅影; 侯洵; 曾一平
1997
Source Publication半导体学报
Volume18Issue:6Pages:401
metadata_83中科院半导体所;中科院西安光学精密机械所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:358596
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19445
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,孙殿照,孔梅影,等. 匹配In(0.53)Ga(0.47)As/InP量子阱材料的GSMBE生长及特性分析[J]. 半导体学报,1997,18(6):401.
APA 王晓亮,孙殿照,孔梅影,侯洵,&曾一平.(1997).匹配In(0.53)Ga(0.47)As/InP量子阱材料的GSMBE生长及特性分析.半导体学报,18(6),401.
MLA 王晓亮,et al."匹配In(0.53)Ga(0.47)As/InP量子阱材料的GSMBE生长及特性分析".半导体学报 18.6(1997):401.
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