SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高性能实用化GaInP-AlGaInP半导体量子阱可见激光器
熊飞克; 郭良; 马骁宇; 王树堂; 陈良惠
1997
Source Publication半导体学报
Volume18Issue:6Pages:424
Abstract用低压MOVPE方法研制出了波长为650nm与670nm的GaInP-AlGaInP半导体量子阱可见光激光器,并已形成一定批量生产能力。批量生产的670nm与650nm半导体量子阱可见光激光器的阈值电流典型值为35mA,额定输出光功率不小于5mW,标称工作温度不低于50℃,预计20℃时寿命接近100000小时,主要技术指标达到目前进口同类产品水平,完全可以满足实验要求。
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:358600
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19443
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
熊飞克,郭良,马骁宇,等. 高性能实用化GaInP-AlGaInP半导体量子阱可见激光器[J]. 半导体学报,1997,18(6):424.
APA 熊飞克,郭良,马骁宇,王树堂,&陈良惠.(1997).高性能实用化GaInP-AlGaInP半导体量子阱可见激光器.半导体学报,18(6),424.
MLA 熊飞克,et al."高性能实用化GaInP-AlGaInP半导体量子阱可见激光器".半导体学报 18.6(1997):424.
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