SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
低阈值电流密度InGaAs/GaAs/AlGaAs应变量子阱激光器
徐遵图; 徐俊英; 杨国文; 张敬明; 陈昌华; 何晓曦; 陈良惠; 沈光地
1997
Source Publication半导体学报
Volume18Issue:5Pages:321
Abstract利用分子束外延技术,生长了极低阈值电流密度、低内损耗、高量子效率的InGaAs/GaAs/AlGaAs应变量子阱激光器。在腔长900μm时,80μm宽接触激光器阈值电流密度是125A/cm~2,在腔长为2000μm时是113A/cm~2,这样低的阈值电流密度是目前国内报道的最低值。激光器的内损耗和内量子效率分别是2cm~(-1)和84%。
metadata_83中科院半导体所;北京工业大学电子工程系
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:358604
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19439
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐遵图,徐俊英,杨国文,等. 低阈值电流密度InGaAs/GaAs/AlGaAs应变量子阱激光器[J]. 半导体学报,1997,18(5):321.
APA 徐遵图.,徐俊英.,杨国文.,张敬明.,陈昌华.,...&沈光地.(1997).低阈值电流密度InGaAs/GaAs/AlGaAs应变量子阱激光器.半导体学报,18(5),321.
MLA 徐遵图,et al."低阈值电流密度InGaAs/GaAs/AlGaAs应变量子阱激光器".半导体学报 18.5(1997):321.
Files in This Item:
File Name/Size DocType Version Access License
5808.pdf(245KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[徐遵图]'s Articles
[徐俊英]'s Articles
[杨国文]'s Articles
Baidu academic
Similar articles in Baidu academic
[徐遵图]'s Articles
[徐俊英]'s Articles
[杨国文]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[徐遵图]'s Articles
[徐俊英]'s Articles
[杨国文]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.