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应变Si(1-x)Ge_x/Si异质结材料的GSMBE生长及X射线双晶衍射研究
邹吕凡; 王占国; 孙殿照; 张靖巍; 李建平; 孔梅影; 林兰英
1997
Source Publication半导体学报
Volume18Issue:5Pages:333
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358607
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19437
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邹吕凡,王占国,孙殿照,等. 应变Si(1-x)Ge_x/Si异质结材料的GSMBE生长及X射线双晶衍射研究[J]. 半导体学报,1997,18(5):333.
APA 邹吕凡.,王占国.,孙殿照.,张靖巍.,李建平.,...&林兰英.(1997).应变Si(1-x)Ge_x/Si异质结材料的GSMBE生长及X射线双晶衍射研究.半导体学报,18(5),333.
MLA 邹吕凡,et al."应变Si(1-x)Ge_x/Si异质结材料的GSMBE生长及X射线双晶衍射研究".半导体学报 18.5(1997):333.
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