SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(111)衬底上IBE法外延生长β-FeSi2薄膜的研究
李慧; 马辉; 丁维清; 秦复光
1997
Source Publication半导体学报
Volume18Issue:4Pages:264
metadata_83北京师范大学分析测试中心;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19433
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李慧,马辉,丁维清,等. Si(111)衬底上IBE法外延生长β-FeSi2薄膜的研究[J]. 半导体学报,1997,18(4):264.
APA 李慧,马辉,丁维清,&秦复光.(1997).Si(111)衬底上IBE法外延生长β-FeSi2薄膜的研究.半导体学报,18(4),264.
MLA 李慧,et al."Si(111)衬底上IBE法外延生长β-FeSi2薄膜的研究".半导体学报 18.4(1997):264.
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