SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy
Yang GW(杨国文); Xu ZT(徐遵图); Xu JY(徐俊英); Zhang JM(张敬明); Xiao JW(肖建伟); Chen LH(陈良惠)
1997
Source Publication半导体学报
Volume18Issue:4Pages:313
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:358626
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19431
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yang GW,Xu ZT,Xu JY,et al. AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy[J]. 半导体学报,1997,18(4):313.
APA 杨国文,徐遵图,徐俊英,张敬明,肖建伟,&陈良惠.(1997).AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy.半导体学报,18(4),313.
MLA 杨国文,et al."AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy".半导体学报 18.4(1997):313.
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