SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
LP-MOVPE生长的1.3μmInGaAsP/InP张压应变交替MQW特性
王志杰; 陈博; 王圩; 张济志; 朱洪亮; 周帆; 金才政; 马朝华; 王启明
1997
Source Publication半导体学报
Volume18Issue:3Pages:232
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:358635
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19429
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王志杰,陈博,王圩,等. LP-MOVPE生长的1.3μmInGaAsP/InP张压应变交替MQW特性[J]. 半导体学报,1997,18(3):232.
APA 王志杰.,陈博.,王圩.,张济志.,朱洪亮.,...&王启明.(1997).LP-MOVPE生长的1.3μmInGaAsP/InP张压应变交替MQW特性.半导体学报,18(3),232.
MLA 王志杰,et al."LP-MOVPE生长的1.3μmInGaAsP/InP张压应变交替MQW特性".半导体学报 18.3(1997):232.
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