SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高纯外延GaAs中浅施主杂质的光热电离谱研究
钱家骏; 陈涌海; 孙明方; 王占国; 林兰英
1997
Source Publication半导体学报
Volume18Issue:4Pages:246
Abstract利用光热电离谱技术研究了4.5K下高纯n-GaAs外延材料的远红外光电导响应谱。给出CPE法和VPE法生长的高纯GaAs材料残留浅施主杂质分别是S、Sn和Sn、P等杂质。实验结果表明本所高纯GaAs组采用的LPE生长技术能有效抑制杂质Si和Sn的沾污。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:358638
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19425
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
钱家骏,陈涌海,孙明方,等. 高纯外延GaAs中浅施主杂质的光热电离谱研究[J]. 半导体学报,1997,18(4):246.
APA 钱家骏,陈涌海,孙明方,王占国,&林兰英.(1997).高纯外延GaAs中浅施主杂质的光热电离谱研究.半导体学报,18(4),246.
MLA 钱家骏,et al."高纯外延GaAs中浅施主杂质的光热电离谱研究".半导体学报 18.4(1997):246.
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