SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
多元素测试仪测定二氧硅烷中的痕量磷
闻瑞梅; 周淑君; 袁越; 赵振环
1997
Source Publication半导体学报
Volume18Issue:2Pages:156
Abstract二氯硅烷的沸点只有8.3℃,常温下呈气体状态,用常规的方法取样和检测难度很大.用高温富氢还原的方法,使二氯硅烷中的磷还原为PH_3,用气相色谱法测定.并在炉口设计了锥形惰性气氛保护炉口装置,有效的防止了氢爆.保证测试安全并能连续进样、操作简便、省时.同时利用NaOH富集,解决了主体干优杂质的问题.方法灵敏、可靠、简便、灵敏度由0.1μg/1提高到0.04μg/1.
metadata_83中科院半导体所;洛阳硅单晶厂;北京北华电子有限公司
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:358646
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19421
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
闻瑞梅,周淑君,袁越,等. 多元素测试仪测定二氧硅烷中的痕量磷[J]. 半导体学报,1997,18(2):156.
APA 闻瑞梅,周淑君,袁越,&赵振环.(1997).多元素测试仪测定二氧硅烷中的痕量磷.半导体学报,18(2),156.
MLA 闻瑞梅,et al."多元素测试仪测定二氧硅烷中的痕量磷".半导体学报 18.2(1997):156.
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