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表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变
王小军; 刘伟; 胡雄伟; 庄婉如; 王启明
1997
Source Publication半导体学报
Volume18Issue:1Pages:4
Abstract报道用MOCVD方法制作高质量的InGaAs/GaAs应变量子阱材料.单量子阱样品在室温光伏谱中出现清晰的11H、12H、21H和22H激子吸收峰.首次用室温光伏方法研究表面自建电场导致InGaAs/GaAs量子阱中子带间跃迁选择定则的改变.
metadata_83国家光电子工艺中心;中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:358665
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19411
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王小军,刘伟,胡雄伟,等. 表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变[J]. 半导体学报,1997,18(1):4.
APA 王小军,刘伟,胡雄伟,庄婉如,&王启明.(1997).表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变.半导体学报,18(1),4.
MLA 王小军,et al."表面电场导致InGaAs/GaAs量子阱子带跃迁选择定则的改变".半导体学报 18.1(1997):4.
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