SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si非平面衬底上SiGe/Si量子阱的光致发光特性
杨沁清; 钱毅; 董文甫; 王启明; 崔堑; 黄绮; 周均铭
1997
Source Publication半导体学报
Volume18Issue:1Pages:10
Abstract采用一种晶向性腐蚀方法,在(100)Si平面衬底上腐蚀得到一种非平面结构,经SiGeMBE外延后,从SEM照片上可以看出,SiGe外延层是一种量子点、线和阱的混合结构.非平面结构上的SiGe层的发光强度为平面结构上的8~10倍.从SiGe层内发出的发光强度占样品总发光强度的96%,且m≈1.1的值表明外延层的质量及对载流子的收集效率是高的.随着激发功率的增加,可以看到PL谱的蓝移.
metadata_83中科院半导体所;中科院物理所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:358666
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19409
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨沁清,钱毅,董文甫,等. Si非平面衬底上SiGe/Si量子阱的光致发光特性[J]. 半导体学报,1997,18(1):10.
APA 杨沁清.,钱毅.,董文甫.,王启明.,崔堑.,...&周均铭.(1997).Si非平面衬底上SiGe/Si量子阱的光致发光特性.半导体学报,18(1),10.
MLA 杨沁清,et al."Si非平面衬底上SiGe/Si量子阱的光致发光特性".半导体学报 18.1(1997):10.
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