SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
功率MOSFET反向特性的分析模拟
周宝霞; 陈治明; 王守觉
1997
Source Publication半导体学报
Volume18Issue:1Pages:32
Abstract对功率MOSFET的反向特性进行了模拟,着重分析了N沟功率MOSFET体内集成二极管的独特的作用,并对P沟器件在特性模拟时由于PSPICE模型参数的限制而表现出来的误差进行了分析,提出了改善措旋,并得到了与实际相符合的结论.
metadata_83西安理工大学;中科院半导体所
Subject Area人工智能
Indexed ByCSCD
Language中文
CSCD IDCSCD:358670
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19407
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周宝霞,陈治明,王守觉. 功率MOSFET反向特性的分析模拟[J]. 半导体学报,1997,18(1):32.
APA 周宝霞,陈治明,&王守觉.(1997).功率MOSFET反向特性的分析模拟.半导体学报,18(1),32.
MLA 周宝霞,et al."功率MOSFET反向特性的分析模拟".半导体学报 18.1(1997):32.
Files in This Item:
File Name/Size DocType Version Access License
5792.pdf(225KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[周宝霞]'s Articles
[陈治明]'s Articles
[王守觉]'s Articles
Baidu academic
Similar articles in Baidu academic
[周宝霞]'s Articles
[陈治明]'s Articles
[王守觉]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[周宝霞]'s Articles
[陈治明]'s Articles
[王守觉]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.