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MBE生长温度对InGaAs/GaAs应变单量阱激光器性能的影响
曾一平; 孔梅影; 王晓亮; 朱世荣; 李灵霄; 李晋闽
1997
Source Publication电子显微学报
Volume16Issue:4Pages:381
Abstract采用分子束外延(MBE)技术,研制生长了InGaAs/GaAs应变单量子阱激光器材料,并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明较高的InGaAs生长温度和尽可能短的生长停顿时间,将有利于降低激光器的闽值电流。所外延的激光器材料在250μm×500μm宽接触、脉冲工作方式下测量的闽电流匠典型值为160mA/CM~2。用湿法腐蚀制作的4μm条宽的脊型波导激光器,闽值电流为16nA,外微分量子效率为0.4mW/mA,激射波和工为976±2nm,线性输出功率为100mW。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:365491
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19403
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曾一平,孔梅影,王晓亮,等. MBE生长温度对InGaAs/GaAs应变单量阱激光器性能的影响[J]. 电子显微学报,1997,16(4):381.
APA 曾一平,孔梅影,王晓亮,朱世荣,李灵霄,&李晋闽.(1997).MBE生长温度对InGaAs/GaAs应变单量阱激光器性能的影响.电子显微学报,16(4),381.
MLA 曾一平,et al."MBE生长温度对InGaAs/GaAs应变单量阱激光器性能的影响".电子显微学报 16.4(1997):381.
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