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优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延
Zou L F; Wang Z G; Sun D Z; Liu X F; Zhang J W; Li J P; Kong M Y; Lin L Y
1997
Source Publication电子显微学报
Volume16Issue:4Pages:395
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:365496
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19401
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zou L F,Wang Z G,Sun D Z,等. 优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延[J]. 电子显微学报,1997,16(4):395.
APA Zou L F.,Wang Z G.,Sun D Z.,Liu X F.,Zhang J W.,...&Lin L Y.(1997).优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延.电子显微学报,16(4),395.
MLA Zou L F,et al."优质应变Si_(1-x)Ge_x/Si超晶格的气源分子束处延".电子显微学报 16.4(1997):395.
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