SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
p型Si_(1-x)Ge_x应变层中重掺杂禁带窄变的计算
吴文刚; 江德生; 罗晋生
1997
Source Publication电子学报
Volume25Issue:8Pages:90
metadata_83中科院半导体所;西安交通大学电子工程系
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:297202
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19395
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴文刚,江德生,罗晋生. p型Si_(1-x)Ge_x应变层中重掺杂禁带窄变的计算[J]. 电子学报,1997,25(8):90.
APA 吴文刚,江德生,&罗晋生.(1997).p型Si_(1-x)Ge_x应变层中重掺杂禁带窄变的计算.电子学报,25(8),90.
MLA 吴文刚,et al."p型Si_(1-x)Ge_x应变层中重掺杂禁带窄变的计算".电子学报 25.8(1997):90.
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