SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ge_xSi_(1-x)减压化学气相外延过程的流体力学和表面反应动力学分析
金晓军; 梁骏吾
1997
Source Publication电子学报
Volume25Issue:8Pages:14
metadata_83清华大学微电子所;中科院半导体所
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:365713
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19393
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
金晓军,梁骏吾. Ge_xSi_(1-x)减压化学气相外延过程的流体力学和表面反应动力学分析[J]. 电子学报,1997,25(8):14.
APA 金晓军,&梁骏吾.(1997).Ge_xSi_(1-x)减压化学气相外延过程的流体力学和表面反应动力学分析.电子学报,25(8),14.
MLA 金晓军,et al."Ge_xSi_(1-x)减压化学气相外延过程的流体力学和表面反应动力学分析".电子学报 25.8(1997):14.
Files in This Item:
File Name/Size DocType Version Access License
5785.pdf(251KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[金晓军]'s Articles
[梁骏吾]'s Articles
Baidu academic
Similar articles in Baidu academic
[金晓军]'s Articles
[梁骏吾]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[金晓军]'s Articles
[梁骏吾]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.