SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs/GaAs自组织量子电的DLTS谱
杨锡震; 陈枫; 封松林
1997
Source Publication发光学报
Volume18Issue:4Pages:357
Abstract将DLTS用于对InAs/GaAs QD结构样品的测量,测定了QD能级发射载流子的热激活能;获得了QD能级俘获电子过程伴随有多声子发射(MPE),QD能级存在一定程度的展宽,以及在某些特定的生长条件下,存在亚稳生长构形的实验证据。结果表明:DLTS在QD体系的研究中有其特有的功能。
metadata_83北京师范大学物理系;中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:366974
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19389
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨锡震,陈枫,封松林. InAs/GaAs自组织量子电的DLTS谱[J]. 发光学报,1997,18(4):357.
APA 杨锡震,陈枫,&封松林.(1997).InAs/GaAs自组织量子电的DLTS谱.发光学报,18(4),357.
MLA 杨锡震,et al."InAs/GaAs自组织量子电的DLTS谱".发光学报 18.4(1997):357.
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