SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
a-Si/SiO_2多量子阱材料制备及其晶化和发光
成步文; 余金中; 于卓; 王启明; 陈坤基; 黄信凡
1997
Source Publication发光学报
Volume18Issue:3Pages:217
metadata_83中科院半导体所;南京大学
Subject Area光电子学
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19387
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
成步文,余金中,于卓,等. a-Si/SiO_2多量子阱材料制备及其晶化和发光[J]. 发光学报,1997,18(3):217.
APA 成步文,余金中,于卓,王启明,陈坤基,&黄信凡.(1997).a-Si/SiO_2多量子阱材料制备及其晶化和发光.发光学报,18(3),217.
MLA 成步文,et al."a-Si/SiO_2多量子阱材料制备及其晶化和发光".发光学报 18.3(1997):217.
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