SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE自组织生长多层竖直自对准InAs量子点结构的研究
朱东海; 范缇文; 梁基本; 徐波; 朱战萍; 龚谦; 江潮; 李含轩; 周伟; 王占国
1997
Source Publication发光学报
Volume18Issue:3Pages:228
Abstract利用MBE方法在(001)GaAs衬底上生长了多层竖直自对准InAs量子点结构。透射电子显微镜的观察表明,多层量子点成一系列柱状分布。同单层量子点相比,多层量子点的光 荧光谱线发生红移。这表明 由于量子点中载流子波函数的扩展和交迭,柱中量子点之间有耦合现象发生。光荧光谱线半高宽随温度的反常变化说明载流子还会在邻近柱中隧穿。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:367004
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19385
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱东海,范缇文,梁基本,等. MBE自组织生长多层竖直自对准InAs量子点结构的研究[J]. 发光学报,1997,18(3):228.
APA 朱东海.,范缇文.,梁基本.,徐波.,朱战萍.,...&王占国.(1997).MBE自组织生长多层竖直自对准InAs量子点结构的研究.发光学报,18(3),228.
MLA 朱东海,et al."MBE自组织生长多层竖直自对准InAs量子点结构的研究".发光学报 18.3(1997):228.
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