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GaAs VCSEL/MISS混合集成光子开关
康学军; 林世鸣; 廖奇为; 高俊华; 王红杰; 朱家廉; 张春晖; 王启明
1997
Source Publication高技术通讯
Volume7Issue:7Pages:36
Abstract报道了MBE生长的GaAs材料VCSEL与MISS混合集成构成的光子开关。将MBE生长的超薄AlAs层氧化为A_xO_y层用作MISS器件的超薄半绝缘层,从而解决了该半绝缘层厚度的精密控制以及与VCSEL工艺相容的问题。该集成器件除光子开关功能外,还能实现光放大功能,并可用于自由空间光互连。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:370332
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19381
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
康学军,林世鸣,廖奇为,等. GaAs VCSEL/MISS混合集成光子开关[J]. 高技术通讯,1997,7(7):36.
APA 康学军.,林世鸣.,廖奇为.,高俊华.,王红杰.,...&王启明.(1997).GaAs VCSEL/MISS混合集成光子开关.高技术通讯,7(7),36.
MLA 康学军,et al."GaAs VCSEL/MISS混合集成光子开关".高技术通讯 7.7(1997):36.
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