SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaN材料的GSMBE生长
王晓亮; 孙殿照; 李晓兵; 黄运衡; 朱世荣; 曾一平; 李晋闽; 孔梅影; 林兰英
1997
Source Publication高技术通讯
Volume7Issue:3Pages:1
Abstract在国内首次用NH_3作氮源的GSMBE方法在α-Al_2O_3衬底上生长出了GaN单晶外延膜。GaN生长速率可达0.5μm/h。GaN外延膜的(0002)双晶X射线衍射峰回摆曲线的半高宽最窄为8arcmin,霍尔迁移率为50cm~2/V·s。对质量好的GaN膜,室温阴极发光谱上只有一个强而锐的近带边发光峰,谱峰位于372nm处,谱峰半高宽为14nm(125meV)。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:370386
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19377
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,孙殿照,李晓兵,等. GaN材料的GSMBE生长[J]. 高技术通讯,1997,7(3):1.
APA 王晓亮.,孙殿照.,李晓兵.,黄运衡.,朱世荣.,...&林兰英.(1997).GaN材料的GSMBE生长.高技术通讯,7(3),1.
MLA 王晓亮,et al."GaN材料的GSMBE生长".高技术通讯 7.3(1997):1.
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