GaAs晶片化学机械抛光的机理分析

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GaAs晶片化学机械抛光的机理分析
	卜俊鹏; 郑红军; 何宏家; 吴让元
	1997
Source Publication	固体电子学研究与进展
Volume	17 Issue:4 Pages:399
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:371557
Date Available	2010-11-23
Citation statistics	Cited Times:4[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19375
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	卜俊鹏,郑红军,何宏家,等. GaAs晶片化学机械抛光的机理分析[J]. 固体电子学研究与进展,1997,17(4):399.
APA	卜俊鹏,郑红军,何宏家,&吴让元.(1997).GaAs晶片化学机械抛光的机理分析.固体电子学研究与进展,17(4),399.
MLA	卜俊鹏,et al."GaAs晶片化学机械抛光的机理分析".固体电子学研究与进展 17.4(1997):399.

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