SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs晶片化学机械抛光的机理分析
卜俊鹏; 郑红军; 何宏家; 吴让元
1997
Source Publication固体电子学研究与进展
Volume17Issue:4Pages:399
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:371557
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19375
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卜俊鹏,郑红军,何宏家,等. GaAs晶片化学机械抛光的机理分析[J]. 固体电子学研究与进展,1997,17(4):399.
APA 卜俊鹏,郑红军,何宏家,&吴让元.(1997).GaAs晶片化学机械抛光的机理分析.固体电子学研究与进展,17(4),399.
MLA 卜俊鹏,et al."GaAs晶片化学机械抛光的机理分析".固体电子学研究与进展 17.4(1997):399.
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