SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaN外延层的拉曼散射研究
李国华; 韩和相; 汪兆平; 段树琨; 王晓亮
1997
Source Publication光散射学报
Volume9Issue:2/3Pages:152
Abstract测量了用MOCPE方法生长在尖晶石衬底上的GaN外延层和用MBE方法生长在蓝宝石衬底上的GaN外延层的喇曼散射,测量在室温下进行。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:372108
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19367
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,韩和相,汪兆平,等. GaN外延层的拉曼散射研究[J]. 光散射学报,1997,9(2/3):152.
APA 李国华,韩和相,汪兆平,段树琨,&王晓亮.(1997).GaN外延层的拉曼散射研究.光散射学报,9(2/3),152.
MLA 李国华,et al."GaN外延层的拉曼散射研究".光散射学报 9.2/3(1997):152.
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