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GeSi/Si多量子阱红外探测器波导结构的理论计算
朱育清; 杨沁清; 王启明
1997
Source Publication光子学报
Volume26Issue:5Pages:408
Abstract采用传输矩阵的方法计算了Ge_xSi_(1-x)/Si量子阱红外探测器结构参量对多量子阱波导结构模场分布,光场限制因子和有效吸收系数的影响,并给出了优化设计的结果。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:372758
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19351
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱育清,杨沁清,王启明. GeSi/Si多量子阱红外探测器波导结构的理论计算[J]. 光子学报,1997,26(5):408.
APA 朱育清,杨沁清,&王启明.(1997).GeSi/Si多量子阱红外探测器波导结构的理论计算.光子学报,26(5),408.
MLA 朱育清,et al."GeSi/Si多量子阱红外探测器波导结构的理论计算".光子学报 26.5(1997):408.
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