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LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性 | |
王志杰; 陈博; 王圩![]() ![]() ![]() | |
1997 | |
Source Publication | 光子学报
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Volume | 26Issue:5Pages:418 |
Abstract | 国内首次报道了LP-MOVPE法生长高质量的高、张应变交替InGaAsP多量子阱结构的研制过程及其材料的高精度X-ray双晶摇摆衍射曲线和荧光光谱特性表征。经过双腔面镀增透射膜后,其TE模与TM模自发发射谱光强差为3dBm,呈现偏振补偿特性。 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体器件 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:372760 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19349 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 王志杰,陈博,王圩,等. LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性[J]. 光子学报,1997,26(5):418. |
APA | 王志杰.,陈博.,王圩.,张济志.,朱洪亮.,...&马朝华.(1997).LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性.光子学报,26(5),418. |
MLA | 王志杰,et al."LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性".光子学报 26.5(1997):418. |
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