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LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性
王志杰; 陈博; 王圩; 张济志; 朱洪亮; 周帆; 王玉田; 金才政; 马朝华
1997
Source Publication光子学报
Volume26Issue:5Pages:418
Abstract国内首次报道了LP-MOVPE法生长高质量的高、张应变交替InGaAsP多量子阱结构的研制过程及其材料的高精度X-ray双晶摇摆衍射曲线和荧光光谱特性表征。经过双腔面镀增透射膜后,其TE模与TM模自发发射谱光强差为3dBm,呈现偏振补偿特性。
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:372760
Date Available2010-11-23
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Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19349
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王志杰,陈博,王圩,等. LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性[J]. 光子学报,1997,26(5):418.
APA 王志杰.,陈博.,王圩.,张济志.,朱洪亮.,...&马朝华.(1997).LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性.光子学报,26(5),418.
MLA 王志杰,et al."LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性".光子学报 26.5(1997):418.
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