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GeSi/Si应变超晶格退火及离子注入研究
肖剑飞; 封松林; 彭长四
1997
Source Publication红外与毫米波学报
Volume16Issue:5Pages:321
Abstract用深能级瞬态谱(DLTS)研究退火及离子注入对分子束外延生长的GeS/i/Si应变超晶格性质的影响,观察到3个与位错有关的深中心和1个表层内的深中心,退火和离子注入都使得这些深中心的浓度增加数倍,说明GeSi/Si应变超晶格不适应做过多的热处理。测定Pd~+注入在GeSi/Si超晶格的杂质能级为E_C=0.28eV,与体Si中的Pd杂质能级一致。
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:375731
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19343
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
肖剑飞,封松林,彭长四. GeSi/Si应变超晶格退火及离子注入研究[J]. 红外与毫米波学报,1997,16(5):321.
APA 肖剑飞,封松林,&彭长四.(1997).GeSi/Si应变超晶格退火及离子注入研究.红外与毫米波学报,16(5),321.
MLA 肖剑飞,et al."GeSi/Si应变超晶格退火及离子注入研究".红外与毫米波学报 16.5(1997):321.
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