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GeSi/Si应变结构内应力纵向分布
肖剑飞; 封松林; 彭长四
1997
Source Publication红外与毫米波学报
Volume16Issue:5Pages:325
Abstract利用深能级瞬态谱(DLTS)研究分子束外延n-Ge_0.2)Si_(0.8)/Si应变超晶格,观察到两个与位错有关的深中心,其中一个能级位置在E_C=0.42eV,另一个随着偏压变化而发生明显 的移动,深能级位置从E_C=0.21eV变化到E_C=0.276eV,我们认为是内应力引起的。取该深能级的流体静压力系数γ=6.59meV/Kba,求出超晶格中的应力分布与计算值符合较好。在此基础上提出了一种通过测量深能级随应力移动效应来确定应变结构内应力纵向分布的新方法。
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:375732
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19341
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
肖剑飞,封松林,彭长四. GeSi/Si应变结构内应力纵向分布[J]. 红外与毫米波学报,1997,16(5):325.
APA 肖剑飞,封松林,&彭长四.(1997).GeSi/Si应变结构内应力纵向分布.红外与毫米波学报,16(5),325.
MLA 肖剑飞,et al."GeSi/Si应变结构内应力纵向分布".红外与毫米波学报 16.5(1997):325.
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