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InAs自组织生长量子点的电子俘获势垒
陈枫; 封松林; 杨锡震; 王志明; 汪辉; 邓元明
1997
Source Publication红外与毫米波学报
Volume16Issue:4Pages:241
Abstract成功地用深能级瞬态谱(DLTS)研究了InAs自组织生长的量子点电学性质,获得2.5原子层InAs量子点电子基态能级在GaAs导带底下约0.13eV,该量子点在荷电状态发生变化时伴随有晶格弛豫,对应俘获势垒为0.32eV。
metadata_83中科院半导体所;北京师范大学物理系
Subject Area半导体物理
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:375740
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19337
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈枫,封松林,杨锡震,等. InAs自组织生长量子点的电子俘获势垒[J]. 红外与毫米波学报,1997,16(4):241.
APA 陈枫,封松林,杨锡震,王志明,汪辉,&邓元明.(1997).InAs自组织生长量子点的电子俘获势垒.红外与毫米波学报,16(4),241.
MLA 陈枫,et al."InAs自组织生长量子点的电子俘获势垒".红外与毫米波学报 16.4(1997):241.
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