SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs/GaAs亚单层结构的静压光谱研究
李国华; 韩和相; 汪兆平; 李伟; 王占国
1997
Source Publication红外与毫米波学报
Volume16Issue:2Pages:131
Abstract在15K下测量了InAs/GaAs亚单层结构的静压光致发光,静压范围为0~8GPa.常压下InAs层中重空穴激子的发光峰随InAs层厚的减小向高能移动,同时峰宽变窄,强度减小。其压力行为与GaAs基体的基本一致,表明量子阱(线、点)模型仍适用于InAs/GaAs亚单层结构。得到平均厚度为1/3单分子层的样品中由于附加的横向限制效应引起的电子和空穴束缚能的增加分别为23和42meV。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:375767
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19335
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,韩和相,汪兆平,等. InAs/GaAs亚单层结构的静压光谱研究[J]. 红外与毫米波学报,1997,16(2):131.
APA 李国华,韩和相,汪兆平,李伟,&王占国.(1997).InAs/GaAs亚单层结构的静压光谱研究.红外与毫米波学报,16(2),131.
MLA 李国华,et al."InAs/GaAs亚单层结构的静压光谱研究".红外与毫米波学报 16.2(1997):131.
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