SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长
潘栋; 曾一平; 吴巨; 孔梅影
1997
Source Publication科学通报
Volume42Issue:15Pages:1610
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19329
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
潘栋,曾一平,吴巨,等. In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长[J]. 科学通报,1997,42(15):1610.
APA 潘栋,曾一平,吴巨,&孔梅影.(1997).In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长.科学通报,42(15),1610.
MLA 潘栋,et al."In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长".科学通报 42.15(1997):1610.
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