In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长
	潘栋; 曾一平; 吴巨; 孔梅影
	1997
Source Publication	科学通报
Volume	42 Issue:15 Pages:1610
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19329
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	潘栋,曾一平,吴巨,等. In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长[J]. 科学通报,1997,42(15):1610.
APA	潘栋,曾一平,吴巨,&孔梅影.(1997).In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长.科学通报,42(15),1610.
MLA	潘栋,et al."In_(0.28)Ga_(0.72)As/GaAs量子点超晶格的生长".科学通报 42.15(1997):1610.

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