SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异
王小军; 金星; 张子平; 郑联喜; 肖智博; 胡雄伟; 王启明
1997
Source Publication物理学报
Volume46Issue:9Pages:1808
AbstractIn_xGa_(1-x)缓冲层上生长In_yGa_(1-y)As/GaAs超晶格(x
metadata_83中科院半导体所;北京电子显微镜开放实验室
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:398662
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19321
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王小军,金星,张子平,等. 超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异[J]. 物理学报,1997,46(9):1808.
APA 王小军.,金星.,张子平.,郑联喜.,肖智博.,...&王启明.(1997).超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异.物理学报,46(9),1808.
MLA 王小军,et al."超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异".物理学报 46.9(1997):1808.
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