SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
具有超晶格缓冲层的量子阱激光器的研制
张福厚; 宋珂; 邢建平; 郝修田; 曾一平
1997
Source Publication中国激光
Volume24Issue:2Pages:97
Abstract在衬底表面制作超晶格缓冲层可以有效地掩埋体材料的缺陷,使阈值电流大幅度降低,光功率成倍增长.所研制出的量子阱激光器室温平均线性光功率大于20mW(未镀反射膜),波长为778nm,最低阈值电流为30mA,阈值电流密度为400~600A/cm~2.谱线宽度为5nm.
metadata_83山东工业大学电子工程系;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:408113
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19307
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张福厚,宋珂,邢建平,等. 具有超晶格缓冲层的量子阱激光器的研制[J]. 中国激光,1997,24(2):97.
APA 张福厚,宋珂,邢建平,郝修田,&曾一平.(1997).具有超晶格缓冲层的量子阱激光器的研制.中国激光,24(2),97.
MLA 张福厚,et al."具有超晶格缓冲层的量子阱激光器的研制".中国激光 24.2(1997):97.
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