SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高光敏性高稳定性氢化非晶硅薄膜的研制
盛殊然; 廖显伯; 孔光临; 刁宏伟
1997
Source Publication中国科学. A辑,数学
Volume27Issue:7Pages:653
Abstract采用“不间断生长/退火”技术,并配之以微量硼补偿,制备了高性能的氢化非晶硅薄膜(a-Si:H),其光敏性(σ_(ph)σ_d)达到10~6)量级,并且稳定性得以显著提高,在100mW/cm~2的白光长时间照射后没有观察到衰退现象。分析指出
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:408444
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19305
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
盛殊然,廖显伯,孔光临,等. 高光敏性高稳定性氢化非晶硅薄膜的研制[J]. 中国科学. A辑,数学,1997,27(7):653.
APA 盛殊然,廖显伯,孔光临,&刁宏伟.(1997).高光敏性高稳定性氢化非晶硅薄膜的研制.中国科学. A辑,数学,27(7),653.
MLA 盛殊然,et al."高光敏性高稳定性氢化非晶硅薄膜的研制".中国科学. A辑,数学 27.7(1997):653.
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