SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Double donor behavior of EL2 defect in photoquenching experiment
Zhou B(周滨); Yang XQ(杨锡权); Wang ZG(王占国)
1998
Source PublicationRare Metals
Volume17Issue:2Pages:129
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:422714
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19297
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhou B,Yang XQ,Wang ZG. Double donor behavior of EL2 defect in photoquenching experiment[J]. Rare Metals,1998,17(2):129.
APA 周滨,杨锡权,&王占国.(1998).Double donor behavior of EL2 defect in photoquenching experiment.Rare Metals,17(2),129.
MLA 周滨,et al."Double donor behavior of EL2 defect in photoquenching experiment".Rare Metals 17.2(1998):129.
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