SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Properties of GaSb substrate wafers for MOCVD III-V antimonids
Peng RW(彭瑞伍); Ding YQ(丁永庆); Xu CM(徐晨梅); Wang ZG(王占国)
1998
Source PublicationRare Metals
Volume17Issue:3Pages:161
metadata_83中科院上海冶金所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:422720
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19295
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Peng RW,Ding YQ,Xu CM,et al. Properties of GaSb substrate wafers for MOCVD III-V antimonids[J]. Rare Metals,1998,17(3):161.
APA 彭瑞伍,丁永庆,徐晨梅,&王占国.(1998).Properties of GaSb substrate wafers for MOCVD III-V antimonids.Rare Metals,17(3),161.
MLA 彭瑞伍,et al."Properties of GaSb substrate wafers for MOCVD III-V antimonids".Rare Metals 17.3(1998):161.
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