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1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器
陈博; 王圩; 张静媛; 汪孝杰; 周帆; 朱洪亮; 边静; 马朝华
1998
Source Publication半导体学报
Volume19Issue:10Pages:793
Abstract在国内首次报道了采用直接刻蚀有源区技术在应变多量子阱有源区结构基础上制作了1.3μm InGaAsP/InP部分增益耦合DFB激光器,器件采用全MOVPE生长,阈值电流10mA,边模抑制比(SMSR)大于35dB,在端面未镀膜情况下器件单纵模成品率较高。
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:423540
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19287
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈博,王圩,张静媛,等. 1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器[J]. 半导体学报,1998,19(10):793.
APA 陈博.,王圩.,张静媛.,汪孝杰.,周帆.,...&马朝华.(1998).1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器.半导体学报,19(10),793.
MLA 陈博,et al."1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器".半导体学报 19.10(1998):793.
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