SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
LP-MOCVD制备AlGaInP高亮度橙横色发光二极管
王国宏; 马骁宇; 曹青; 张玉芳; 王树堂; 李玉璋; 陈良惠
1998
Source Publication半导体学报
Volume19Issue:9Pages:712
Abstract利用LP-MOCVD外延生长AlGaInP DH 结构橙黄色发光二极管。引入厚层Al_(0.7)Ga_(0.3)As电流扩展层和Al_(0.5)Ga_(0.5)As-AlAs分布布拉格反射器(KBR)。20mA工作条件下,工作电压1.9V,发光波长峰值在605nm,峰值半宽为18.3nm,管芯平均亮度达到20mcd,最大29.4mcd,透明封装成视角(2θ_(1/2)15°的LED灯亮度达到1cd。
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:423546
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19283
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王国宏,马骁宇,曹青,等. LP-MOCVD制备AlGaInP高亮度橙横色发光二极管[J]. 半导体学报,1998,19(9):712.
APA 王国宏.,马骁宇.,曹青.,张玉芳.,王树堂.,...&陈良惠.(1998).LP-MOCVD制备AlGaInP高亮度橙横色发光二极管.半导体学报,19(9),712.
MLA 王国宏,et al."LP-MOCVD制备AlGaInP高亮度橙横色发光二极管".半导体学报 19.9(1998):712.
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