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半导体GaN/MgAl2O4中缓冲层的透射电子显微分析
韩培德; 杨海峰; 张泽; 段树坤; 滕学公
1998
Source Publication半导体学报
Volume19Issue:10Pages:736
metadata_83中科院凝聚态物理中心;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423550
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19279
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩培德,杨海峰,张泽,等. 半导体GaN/MgAl2O4中缓冲层的透射电子显微分析[J]. 半导体学报,1998,19(10):736.
APA 韩培德,杨海峰,张泽,段树坤,&滕学公.(1998).半导体GaN/MgAl2O4中缓冲层的透射电子显微分析.半导体学报,19(10),736.
MLA 韩培德,et al."半导体GaN/MgAl2O4中缓冲层的透射电子显微分析".半导体学报 19.10(1998):736.
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