SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE生长InAs薄膜输运性质的研究
周宏伟; 董建荣; 王红梅; 曾一平; 朱占萍; 潘量; 孔梅影
1998
Source Publication半导体学报
Volume19Issue:9Pages:646
Abstract在GaSa衬底上MBE生长大失配InAs薄膜,虽然在界面处存在大量位错,但仍能在InAs薄膜中得到较高的电子迁移率。掺Si样品的迁移率比同厚度未掺杂的样品要高。且对未掺杂的InAs薄膜,迁移率在室温附近有一个明显的极小值。这些反常行为可以通过体层和界面层电子的并联电导模型来解释。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423558
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19275
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周宏伟,董建荣,王红梅,等. MBE生长InAs薄膜输运性质的研究[J]. 半导体学报,1998,19(9):646.
APA 周宏伟.,董建荣.,王红梅.,曾一平.,朱占萍.,...&孔梅影.(1998).MBE生长InAs薄膜输运性质的研究.半导体学报,19(9),646.
MLA 周宏伟,et al."MBE生长InAs薄膜输运性质的研究".半导体学报 19.9(1998):646.
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