SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
在GaSb衬底上生长c-GaN的初步研究
黄大定; 高维滨; 吴正龙; 张建辉; 刘志凯
1998
Source Publication半导体学报
Volume19Issue:9Pages:656
AbstractAES、XPS和XRD谱结果证明
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423560
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19273
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
黄大定,高维滨,吴正龙,等. 在GaSb衬底上生长c-GaN的初步研究[J]. 半导体学报,1998,19(9):656.
APA 黄大定,高维滨,吴正龙,张建辉,&刘志凯.(1998).在GaSb衬底上生长c-GaN的初步研究.半导体学报,19(9),656.
MLA 黄大定,et al."在GaSb衬底上生长c-GaN的初步研究".半导体学报 19.9(1998):656.
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