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γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长
昝育德; 王俊; 韩秀峰; 王玉田; 王维民; 王占国; 林兰英
1998
Source Publication半导体学报
Volume19Issue:12Pages:886
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家计委八五计划,国家计委九五计划
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19271
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
昝育德,王俊,韩秀峰,等. γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长[J]. 半导体学报,1998,19(12):886.
APA 昝育德.,王俊.,韩秀峰.,王玉田.,王维民.,...&林兰英.(1998).γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长.半导体学报,19(12),886.
MLA 昝育德,et al."γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长".半导体学报 19.12(1998):886.
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