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GaAs脊形量子线发光性质的光致发光谱研究
牛智川; 袁之良; 周增圻; 徐仲英; 王守武
1998
Source Publication半导体学报
Volume19Issue:11Pages:871
Abstract报道了用MBE非平面生长方法制备的GaAs脊形量子线发光性特实验研究。低温、微区、变温和极化光致发光谱等的测试分析表明
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:423584
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19261
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
牛智川,袁之良,周增圻,等. GaAs脊形量子线发光性质的光致发光谱研究[J]. 半导体学报,1998,19(11):871.
APA 牛智川,袁之良,周增圻,徐仲英,&王守武.(1998).GaAs脊形量子线发光性质的光致发光谱研究.半导体学报,19(11),871.
MLA 牛智川,et al."GaAs脊形量子线发光性质的光致发光谱研究".半导体学报 19.11(1998):871.
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