SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Pt-Ni/p-InP低阻欧姆接触的机理研究
李秉臣; 王玉田; 庄岩
1998
Source Publication半导体学报
Volume19Issue:5Pages:397
Abstract利用X射线衍射和AES(俄歇)方法,深入地研究了RF磁探溅射淀积的Pt-Ni/p-InP(100)非合金膜系在热退火过程中Pt和Ni与衬底InP中的In和P形成稳定化合物的行为,揭示了比接触电阻降低于3×10~(-6)Ω·cm~2的根本原因。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:423596
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19255
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李秉臣,王玉田,庄岩. Pt-Ni/p-InP低阻欧姆接触的机理研究[J]. 半导体学报,1998,19(5):397.
APA 李秉臣,王玉田,&庄岩.(1998).Pt-Ni/p-InP低阻欧姆接触的机理研究.半导体学报,19(5),397.
MLA 李秉臣,et al."Pt-Ni/p-InP低阻欧姆接触的机理研究".半导体学报 19.5(1998):397.
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