SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs自组织生长量子点超晶格的电学性质
陈枫; 封松林; 杨锡震; 王志明; 赵谦; 温亮生
1998
Source Publication半导体学报
Volume19Issue:6Pages:401
Abstract利用深能级瞬态谱(DLTS)研究了一系列InAs自组织生长的量子点超晶格样品,确认样品中存在体GaAs缺陷能级EL2和InAs量子点电子基态能级。测得1.7和2.5原子层InAs量子点电子基态能级相对于GaAs的导带底分别为100meV和210meV,量子点电子基态的俘获热垒分别为0.48eV和0.30eV。
metadata_83中科院半导体所;北京师范大学物理系
Subject Area半导体物理
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:423597
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19253
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈枫,封松林,杨锡震,等. InAs自组织生长量子点超晶格的电学性质[J]. 半导体学报,1998,19(6):401.
APA 陈枫,封松林,杨锡震,王志明,赵谦,&温亮生.(1998).InAs自组织生长量子点超晶格的电学性质.半导体学报,19(6),401.
MLA 陈枫,et al."InAs自组织生长量子点超晶格的电学性质".半导体学报 19.6(1998):401.
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