SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅的位错核心结构无悬挂键
昝育德
1998
Source Publication半导体学报
Volume19Issue:6Pages:406
Abstract应用物理学平衡状态下能量最低的基本原理,通过分析透射电镜晶格象,制作了90°、30°分位错及Cotterll位错等一系列的模型,说明硅中位错核心无悬挂键。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423598
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19251
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
昝育德. 硅的位错核心结构无悬挂键[J]. 半导体学报,1998,19(6):406.
APA 昝育德.(1998).硅的位错核心结构无悬挂键.半导体学报,19(6),406.
MLA 昝育德."硅的位错核心结构无悬挂键".半导体学报 19.6(1998):406.
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