SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InAs薄膜Hall器件的材料生长与特性研究
王红梅; 曾一平; 周宏伟; 董建荣; 潘栋; 潘量; 孔梅影
1998
Source Publication半导体学报
Volume19Issue:6Pages:413
Abstract报道了利用InAs外延薄膜制作霍尔器件,通过分子束外延技术在GaAs衬底上生长的InAs薄膜具有较高的迁移率和较好的温度特性。用这种材料制作的霍尔器件在每千欧姆内阻条件下灵敏度与GaAs平面Hall器件相比提高了50%。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423599
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19249
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王红梅,曾一平,周宏伟,等. InAs薄膜Hall器件的材料生长与特性研究[J]. 半导体学报,1998,19(6):413.
APA 王红梅.,曾一平.,周宏伟.,董建荣.,潘栋.,...&孔梅影.(1998).InAs薄膜Hall器件的材料生长与特性研究.半导体学报,19(6),413.
MLA 王红梅,et al."InAs薄膜Hall器件的材料生长与特性研究".半导体学报 19.6(1998):413.
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