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In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化 | |
王晓亮; 孔殿照; 孔梅影; 侯洵; 曾一平 | |
1998 | |
Source Publication | 半导体学报
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Volume | 19Issue:6Pages:417 |
metadata_83 | 中科院半导体所;中科院西安光学精密机械所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19247 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 王晓亮,孔殿照,孔梅影,等. In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化[J]. 半导体学报,1998,19(6):417. |
APA | 王晓亮,孔殿照,孔梅影,侯洵,&曾一平.(1998).In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化.半导体学报,19(6),417. |
MLA | 王晓亮,et al."In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化".半导体学报 19.6(1998):417. |
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