SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化
王晓亮; 孔殿照; 孔梅影; 侯洵; 曾一平
1998
Source Publication半导体学报
Volume19Issue:6Pages:417
metadata_83中科院半导体所;中科院西安光学精密机械所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19247
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,孔殿照,孔梅影,等. In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化[J]. 半导体学报,1998,19(6):417.
APA 王晓亮,孔殿照,孔梅影,侯洵,&曾一平.(1998).In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化.半导体学报,19(6),417.
MLA 王晓亮,et al."In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化".半导体学报 19.6(1998):417.
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