In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化
	王晓亮; 孔殿照; 孔梅影; 侯洵; 曾一平
	1998
Source Publication	半导体学报
Volume	19 Issue:6 Pages:417
metadata_83	中科院半导体所;中科院西安光学精密机械所
Subject Area	半导体材料
Funding Organization	国家863计划
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19247
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	王晓亮,孔殿照,孔梅影,等. In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化[J]. 半导体学报,1998,19(6):417.
APA	王晓亮,孔殿照,孔梅影,侯洵,&曾一平.(1998).In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化.半导体学报,19(6),417.
MLA	王晓亮,et al."In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化".半导体学报 19.6(1998):417.

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