SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
含耦合双量子阱的半导体微腔的透射谱
王文利; 姬扬; 郑厚植
1998
Source Publication半导体学报
Volume19Issue:5Pages:385
Abstract从基本的光跃迁理论出发,用半经典的线性色散模型,计算了双量子阱耦合情况下微腔透射谱。计算结果表明,当吸收系数取2×10~(-2)nm~(-1)时,在微腔的透射谱上能看到三个很高的透射峰,并且峰的线宽要窄于冷腔透射峰的线宽。这是由于耦合激子态与微腔光场的强耦合相互作用引起的。
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:423617
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19241
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王文利,姬扬,郑厚植. 含耦合双量子阱的半导体微腔的透射谱[J]. 半导体学报,1998,19(5):385.
APA 王文利,姬扬,&郑厚植.(1998).含耦合双量子阱的半导体微腔的透射谱.半导体学报,19(5),385.
MLA 王文利,et al."含耦合双量子阱的半导体微腔的透射谱".半导体学报 19.5(1998):385.
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