SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅发光研究
夏建白
1998
Source Publication半导体学报
Volume19Issue:5Pages:321
Abstract硅发光对于在单一硅片上实现光电集成是至关重要的。该文介绍了目前已有的使硅发光的方法;掺深能级杂质,掺稀土离子,多孔硅,纳米硅以及Si/SiO_2超晶格,讨论了两种可能的发光机制
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:423630
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19233
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
夏建白. 硅发光研究[J]. 半导体学报,1998,19(5):321.
APA 夏建白.(1998).硅发光研究.半导体学报,19(5),321.
MLA 夏建白."硅发光研究".半导体学报 19.5(1998):321.
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